Things don't get much slimmer than a sheet of graphene molecules, just one carbon atom thick (Image: Pasieka/SPL/Getty)
Astonishing conductivity helped the discoverers of graphene win the Nobel prize in physics
in 2010. Now a way to switch off the easy flow of electrons in this
wonder form of carbon is bringing superfast graphene computers closer.
A sheet-like molecule just one carbon atom thick, graphene offers much less resistance to the flow of electrons than silicon. It has been hailed for its potential as the basis for computer circuits that operate at unprecedented speed. "It's an extremely promising material," says Konstantin Novoselov, who shared the Nobel prize with his co-discoverer, Andre Geim, both at the University of Manchester, UK.
But
the ease of electron flow also creates a problem. To perform
calculations, computers need to turn the flow of electricity on and off
in their circuits. The gates that open and close to regulate the flow
are called transistors. Making graphene-based transistors has proven difficult because it is such a good conductor.
Previous
attempts have involved electrons confined to a single layer of
graphene, but these still suffer from a leakage of electrons when the
transistor is in its "off" state.
Quantum tunnel
Now
Novoselov and colleagues have found a way to overcome this leakage
problem by sandwiching a layer of molybdenum disulfide between two
layers of graphene. The molybdenum acts as an insulator, preventing
electrons from flowing in the normal way from one graphene layer to the
other. This constitutes an "off" state.
A quantum mechanical effect means a small number of electrons can "tunnel"
through the molybdenum. This normally happens very rarely but applying
a voltage across the barrier boosts the energy of the electrons, making
tunnelling much more probable – a sizable current starts to flow. This
is the "on" state. By varying the voltage, the researchers could turn
the flow on and off, making the device a transistor.
The
graphene sandwich reduces leakage by a factor of 10 compared with
previous graphene-based transistors. The team suggests reducing leakage
further by increasing the thickness of the insulating layer. "It really
opens a new dimension in our research," says Novoselov.
Journal reference: Science, DOI: 10.1126/science.1218461
http://www.newscientist.com/
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